Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

• Christoph Schreyvogel,
• Vladimir Polyakov,
• Sina Burk,
• Helmut Fedder,
• Andrej Denisenko,
• Felipe Fávaro de Oliveira,
• Ralf Wunderlich,
• Jan Meijer,
• Verena Zuerbig,
• Jörg Wrachtrup and
• Christoph E. Nebel

Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165

• for quantum communication and cryptography. Keywords: active charge state control; diamond; fast charge state switching; NV centre; two-dimensional Schottky diode; Introduction The nitrogen-vacancy centre (NV centre) in diamond is known to exist in at least three different charge states (NV−, NV0

• leads to very large T2 times [11] which is required for quantum information storage as well as for conserving the entanglement with high fidelity [12]. Therefore, an important requirement for realizing quantum optical applications with single NV centres is not only an active charge state control but

• -plane Al-Schottky diode measured at ambient conditions. Active charge state control of a single NV centre. At zero bias there is only a PL-background of the diamond surface (black spectrum) since the NV centre is in the nonfluorescent NV+ state due to the interaction with the two-dimensional hole